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| 2SJ291 Silicon P-Channel MOS FET November 1996 www..com Application High speed power switching Features * * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ291 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www..com Avalanche current Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings -60 20 -20 -80 -20 -20 Unit V V A A A A mJ W C C Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 3. Value at Tch = 25C, Rg 50 EAR* Tch 3 34 2 Pch* 60 150 -55 to +150 Tstg 2 2SJ291 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current www..com Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) -60 20 -- -- -1.0 -- -- Typ -- -- -- -- -- 0.05 0.07 16 2200 1000 300 25 130 320 210 -1.1 160 Max -- -- 10 -250 -2.25 0.065 0.095 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V ID = -10 A, VGS = -10 V* ID = -10 A, VGS = -4 V* VDS = -10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 -- -- -- -- -- -- -- -- -- ID = -10 A, VDS = -10 V* 1 ID = -10 A, VGS = -10 V, RL = 3 IF = -20 A, VGS = 0 IF = -20 A, VGS = 0, diF/dt = 50 A/s 3 2SJ291 Power vs. Temperature Derating 80 Pch (W) Channel Dissipation 60 40 20 www..com 0 50 100 150 Tc (C) 200 Case Temperature Maximum Safe Operation Area -500 I D (A) -200 -100 -50 -20 -10 Operation in this area is DC 10 s 10 PW Op era 0 Drain Current =1 tio 0m Tc 1m s( s s ho t) -5 limited by R DS(on) -2 n( 1s =2 5 C) -1 Ta = 25 C -0.5 -1 -2 -5 -10 -20 -50 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -50 -10 V -6 V -5 V -4.5 V Pulse Test -4 V -3.5 V I D (A) Drain Current -40 -30 -20 -3 V VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -10 Typical Transfer Characteristics -20 V DS = -10 V Pulse Test ID Drain Current (A) -16 -12 -8 Tc = -25 C -4 25 C 75 C 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 4 2SJ291 Drain to Source Saturation Voltage vs. Gate to Source Voltage -2.0 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test -1.6 -1.2 -20 A -0.8 -10 A -0.4 I D = -5 A www..com 0 -2 -4 -6 Gate to Source Voltage -8 -10 V GS (V) Drain to Source On State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = -4 V -10 V 0.05 0.02 0.01 -1 -2 -5 -10 -20 -50 -100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance R DS(on) ( ) 0.2 Pulse Test 0.16 0.12 I D = -20 A VGS = -4 V -5 A -10 A -5 A -10 A -20 A 0.08 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) 5 2SJ291 Forward Transfer Admittance |y fs | (S) 50 Forward Transfer Admittance vs. Drain Current 20 10 5 2 1 0.5 -0.2 Tc = -25 C 25 C 75 C www..com V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di/dt = 50 A/s VGS = 0, duty < 1 % 200 100 50 20 10 -0.5 -1 -2 -5 -10 -20 -50 Reverse Drain Current I DR (A) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 1000 Coss Crss 100 VGS = 0 f = 1 MHz 1 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) 6 Capacitance C (pF) 2SJ291 Dynamic Input Characteristics V DS (V) V DD = -10 V -25 V -50 V I D = -20 A -8 V DS V DD = -10 V -25 V -50 V V GS V GS (V) Gate to Source Voltage 0 0 -20 -4 Drain to Source Voltage -40 -60 -12 -80 -16 -20 200 www..com -100 0 40 80 120 160 Gate Charge Qg (nc) Switching Characteristics 1000 500 Switching Time t (ns) V GS = -10 V, V DD = -30 V PW = 2 s, duty < 1 % t d(off) 200 100 tr 50 t d(on) 20 10 -0.2 tf -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) Reverse Drain Current vs. Source to Drain Voltage -20 Reverse Drain Current I DR (A) Pulse Test -16 -12 -10 V -5 V V GS = 0, 5 V -8 -4 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain to Source Voltage V DS (V) 7 2SJ291 Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) 50 I AP = -20 A V DD = -25 V duty < 0.1 % Rg > 50 40 30 20 10 0 25 www..com 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit and Waveform L I AP Monitor I AP Rg Vin -15 V D. U. T VDD ID 50 0 VDD V DS EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor V (BR)DSS Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 Ta = 25 C 0.3 0.1 0.1 0.05 0.03 ch - c(t) = s (t) * ch - c ch - c = 2.08 C/W PCM 0.02 0.01 0.01 D= PW T PW T 0.003 10 1sh ot p uls e 100 1m 10 m 100 m 1 PW (S) 10 100 1000 Pulse Width Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin Waveforms 10% 90% Vin -10 V 50 V DD = 30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 8 2SJ291 www..com When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 9 |
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